november 1999 1/11 ? 1 vnd05b / vnd05b (011y) / vnd05b (012y) double channel high side smart power solid state relay 1 n output current (continuous): 9a at t c =85 c per channel n 5v logic level compatible input n thermal shut-down n undervoltage protection n open drain diagnostic output n inductive load fast demagnetization n very low stand-by power dissipation description the vnd05b, vnd05b (011y), vnd05b (012y) is a monolithic device designed in stmicroelectronics vipower technology, intended for driving resistive or inductive loads with one side connected to ground. this device has two channels, and a common diagnostic. built-in thermal shutdown protects the chip from overtemperature and short circuit. the status output provides an indication of open load in on state, open load in off state, overtemperature conditions and stuck-on to v cc . type v dss r ds(on) i n (*) v cc vnd05b vnd05b (011y) vnd05b (012y) 40v 200m w 1.6a 26 v heptawatt heptawatt heptawatt order codes heptawatt vertical heptawatt horizontal heptawatt in-line vnd05b vnd05b (011y) vnd05b (012y) (vertical) (horizontal) (in-line) block diagram (*) i n = nominal current according to iso definition for high side automotive switch (see note 1)
2/11 vnd05b / vnd05b (011y) / vnd05b (012y) absolute maximum rating connection diagram top view current and voltage conventions symbol parameter value unit v (br)dss drain-source breakdown voltage 40 v i out output current (continuous) at t c =85 c 9 a i out (rms) rms output current at t c =85c and f > 1hz 9 a i r reverse output current at t c =85c -9 a i in input current +/- 10 ma -v cc reverse supply voltage -4 v i stat status current +/- 10 ma v esd electrostatic discharge (r=1.5k w , c=100pf) 2000 v p tot power dissipation at t c =25c 59 w t j junction operating temperature -40 to 150 c t stg storage temperature -55 to 150 c 1
3/11 vnd05b / vnd05b (011y) / vnd05b (012y) thermal data electrical characteristics (8v 4/11 vnd05b / vnd05b (011y) / vnd05b (012y) electrical characteristics (continued) protections and diagnostics (*) i n =nominal current according to iso definition for high side automotive switch (see note 1) (^) see switching time waveform ( ) the v ih is internally clamped at 6v about. it is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 ma at the input pin. note 1: the nominal current is the current at t c =85 c for battery voltage of 13v which produces a voltage drop of 0.5v note 2: i ol(off) = (v cc -v ol )/r ol note 3: t povl t pol : iso definition symbol parameter test conditions min typ max unit v stat low output voltage status i stat =1.6ma 0.4 v v usd undervoltage shut-down 3.5 4.5 6 v v scl status clamp voltage i stat = 10ma i stat = -10ma 56 -0.7 7v v t tsd thermal shut-down temperature 140 160 180 c t tsd(hyst) thermal shutdown hysteresis temperature 50 c t r reset temperature 125 c v ol open voltage level off state (note 2) 2.5 4 5 v i ol open load current level on state 5 180 ma t povl overtemperature status delay (note 3) 5 10 m s t pol open load status delay (note 3) 50 500 2500 m s 2 note 2 relevant figure note 3 relevant figure
5/11 vnd05b / vnd05b (011y) / vnd05b (012y) functional description the device has a common diagnostic output for both channels which indicates open load in on- state, open load in off-state, overtemperature conditions and stuck-on to v cc . from the falling edge of the input signal, the status output, initially low to signal a fault condition (overtemperature or open load on-state), will go back to a high state with a different delay in case of overtemperature (t povl ) and in case of open load (t pol ) respectively. this feature allows to discriminate the nature of the detected fault. to protect the device against short-circuit and overcurrent condition, the thermal protection turns the integrated powermos off at a minimum junction temperature of 140 c. when this temperature returns to 125 c the switch is automatically turned in again. in short-circuit the protection reacts with virtually no delay, the sensor (one for each channel) being located inside each of the two powermos areas. this positioning allows the device to operate with one channel in automatic thermal cycling and the other one on a normal load. an internal function of the devices ensures the fast demagnetization of inductive loads with a typical voltage (v demag ) of -18v. this function allows to greatly reduce the power dissipation according to the formula: p dem = 0.5 l load (i load ) 2 [(v cc +v demag )/v demag ] f where f= switching frequency and v demag = demagnetization voltage. the maximum inductance which causes the chip temperature to reach the shutdown temperature in a specified thermal environment is a function of the load current for a fixed v cc , v demag and f according to the above formula. in this device if the gnd pin is disconnected, with v cc not exceeding 16v, both channels will switch off. protecting the device against reverse battery the simplest way to protect the device against a continuous reverse battery voltage (-26v) is to insert a schottky diode between pin 2 (gnd) and ground, as shown in the typical application circuit (fig. 2). the consequences of the voltage drop across this diode are as follows: - if the input is pulled to power gnd, a negative voltage of -v f is seen by the device. (v il , v ih thresholds and v stat are increased by v f with respect to power gnd). - the undervoltage shutdown level is increased by v f . if there is no need for the control unit to handle external analog signals referred to the power gnd, the best approach is to connect the reference potential of the control unit to the device ground (see application circuit in fig. 3), which becomes the common signal gnd for the whole control board avoiding shift on v il , v ih and v stat . this solution allows the use of a standard diode. switching time waveforms
6/11 vnd05b / vnd05b (011y) / vnd05b (012y) thruth table 1 figure: 1: waveforms input 1 input 2 output 1 output 2 diagnostic normal operation l h l h l h h l l h l h l h h l h h h h undervoltage x x l l h thermal shutdown channel 1 h xlxl channel 2 x h x l l openload channel 1 h l x l h l x l l l channel 2 x l h l x l h l l l output shorted to v cc channel 1 h l x l h h x l l l channel 2 x l h l x l h h l l
7/11 vnd05b / vnd05b (011y) / vnd05b (012y) 2 figure 2: typical application circuit with a schottky diode for reverse supply protection figure 3: typical application circuit with separate signal ground
8/11 vnd05b / vnd05b (011y) / vnd05b (012y) 1 dim. mm. inch min. typ max. min. typ. max. a 4.8 0.189 c 1.37 0.054 d 2.4 2.8 0.094 0.110 d1 1.2 1.35 0.047 0.053 e 0.35 0.55 0.014 0.022 f 0.6 0.8 0.024 0.031 f1 0.9 0.035 g 2.41 2.54 2.67 0.095 0.100 0.105 g1 4.91 5.08 5.21 0.193 0.200 0.205 g2 7.49 7.62 7.8 0.295 0.300 0.307 h2 10.4 0.409 h3 10.05 10.4 0.396 0.409 l 14.2 0.559 l1 4.4 0.173 l2 15.8 0.622 l3 5.1 0.201 l5 2.6 3 0.102 0.118 l6 15.1 15.8 0.594 0.622 l7 6 6.6 0.236 0.260 l9 4.44 0.175 dia 3.65 3.85 0.144 0.152 heptawatt (horizontal) mechanical data 1
9/11 vnd05b / vnd05b (011y) / vnd05b (012y) 1 dim. mm. inch min. typ max. min. typ. max. a 4.8 0.189 c 1.37 0.054 d 2.4 2.8 0.094 0.110 d1 1.2 1.35 0.047 0.053 e 0.35 0.55 0.014 0.022 f 0.6 0.8 0.024 0.031 f1 0.9 0.035 g 2.41 2.54 2.67 0.095 0.100 0.105 g1 4.91 5.08 5.21 0.193 0.200 0.205 g2 7.49 7.62 7.8 0.295 0.300 0.307 h2 10.4 0.409 h3 10.05 10.4 0.396 0.409 l 16.97 0.668 l1 14.92 0.587 l2 21.54 0.848 l3 22.62 0.891 l5 2.6 3 0.102 0.118 l6 15.1 15.8 0.594 0.622 l7 6 6.6 0.236 0.260 m 2.8 0.110 m1 5.08 0.200 heptawatt (vertical) mechanical data 1
10/11 vnd05b / vnd05b (011y) / vnd05b (012y) 1 dim. mm. inch min. typ max. min. typ. max. a 4.8 0.189 c 1.37 0.054 d 2.4 2.8 0.094 0.110 d1 1.2 1.35 0.047 0.053 e 0.35 0.55 0.014 0.022 f 0.6 0.8 0.024 0.031 f1 0.9 0.035 g 2.41 2.54 2.67 0.095 0.100 0.105 g1 4.91 5.08 5.21 0.193 0.200 0.205 g2 7.49 7.62 7.8 0.295 0.300 0.307 h2 10.4 0.409 h3 10.05 10.4 0.396 0.409 l2 22.4 22.9 0.882 0.902 l3 25.4 26 1.000 1.024 l5 2.6 3 0.102 0.118 l6 15.1 15.8 0.594 0.622 l7 6 6.6 0.236 0.260 dia. 3.65 3.85 0.144 0.152 heptawatt (in-line) mechanical data 1
11/11 vnd05b / vnd05b (011y) / vnd05b (012y) 1 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this p ublication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicr oelectronics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics - printed in italy- all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. http://www.st.com
|
